Search results for "X-ray and gamma ray detectors"
showing 8 items of 8 documents
X-ray response of CdZnTe detectors grown by the vertical Bridgman technique: Energy, temperature and high flux effects
2016
Abstract Nowadays, CdZnTe (CZT) is one of the key materials for the development of room temperature X-ray and gamma ray detectors and great efforts have been made on both the device and the crystal growth technologies. In this work, we present the results of spectroscopic investigations on new boron oxide encapsulated vertical Bridgman (B-VB) grown CZT detectors, recently developed at IMEM-CNR Parma, Italy. Several detectors, with the same electrode layout (gold electroless contacts) and different thicknesses (1 and 2.5 mm), were realized: the cathode is a planar electrode covering the detector surface (4.1×4.1 mm2), while the anode is a central electrode (2×2 mm2) surrounded by a guard-rin…
Development of a 3D CZT Spectrometer System with Digital Readout for Hard X/Gamma-Ray Astronomy
2019
We report on the development and of a complete X/γ rays detection system (10-1000 keV) based on CZT spectrometers with spatial resolution in three dimensions (3D) and a digital electronics acquisition chain. The prototype is made by packing four linear modules, each composed of one 3D CZT sensors. Each sensors is realized using a single spectroscopic graded CZT crystal of about 20×20×5 mm3. An electrode structure consisting of 12 collecting anodes with a pitch of 1.6 mm and 3 drift strips between each pair of anodes for 48 strips (0.15 mm wide) on the anodic side was adopted. The cathode is made of 10 strips with a pitch of 2 mm and orthogonal to anode side strips. Since the reading of the …
New Results on High-Resolution 3-D CZT Drift Strip Detectors
2020
Intense research activities have been carry out in the development of room temperature gamma ray spectroscopic imagers, aiming to compete with the excellent energy resolution of high-purity germanium (HPGe) detectors (0.3 % FWHM at 662 keV) obtained after cryogenic cooling. Cadmium-zinc-telluride (CZT) detectors equipped with pixel, strip and virtual Frisch-grid electrode structures represented an appealing solution for room temperature measurements. In this work, we present the performance of new high-resolution CZT drift strip detectors (19.4 x 19.4 x 6 mm3), recently fabricated at IMEM-CNR of Parma (Italy) in collaboration with due2lab company (Reggio Emilia, Italy). The detectors, worki…
Room-temperature performance of 3 mm-thick cadmium-zinc-telluride pixel detectors with sub-millimetre pixelization.
2020
Cadmium–zinc–telluride (CZT) pixel detectors represent a consolidated choice for the development of room-temperature spectroscopic X-ray imagers, finding important applications in medical imaging, often as detection modules of a variety of new SPECT and CT systems. Detectors with 3–5 mm thicknesses are able to efficiently detect X-rays up to 140 keV giving reasonable room-temperature energy resolution. In this work, the room-temperature performance of 3 mm-thick CZT pixel detectors, recently developed at IMEM/CNR of Parma (Italy), is presented. Sub-millimetre detector arrays with pixel pitch less than 500 µm were fabricated. The detectors are characterized by good room-temperature performan…
Charge Sharing and Cross Talk Effects in High-Z and Wide-Bandgap Compound Semiconductor Pixel Detectors
2023
Intense research activities have been made in the development of high-Z and wide-bandgap compound semiconductor pixel detectors for the next generation X-ray and gamma ray spectroscopic imagers. Cadmium telluride (CdTe) and cadmium-zinc-telluride (CdZnTe or CZT) pixel detectors have shown impressive performance in X-ray and gamma ray detection from energies of few keV up to 1 MeV. Charge sharing and cross-talk phenomena represent the typical drawbacks in sub-millimeter pixel detectors, with severe distortions in both energy and spatial resolution. In this chapter, we review the effects of these phenomena on the response of CZT/CdTe pixel detectors, with particular emphasis on the current st…
Digital Pulse-Processing Techniques for X-Ray and Gamma-Ray Semiconductor Detectors
2017
Over the last decade, digital pulse-processing (DPP) electronics have been widely proposed and used for new generation x- and gamma-ray spectrometers. DPP systems, based on direct digitizing and processing of detector signals, lead to better results than the traditional analog pulse-processing electronics in terms of stability, flexibility, reproducibility, energy resolution, throughput, and dead time. In this chapter, we will review the principles of operation of conventional analog electronic chains for x- and gamma-ray semiconductor detectors, with special emphasis on the benefits of the digital approach. The characteristics of a new real-time DPP system, developed by our group, are disc…
Ballistic Deficit Pulse Processing in Cadmium-Zinc-Telluride Pixel Detectors for High-Flux X-ray Measurements.
2022
High-flux X-ray measurements with high-energy resolution and high throughput require the mitigation of pile-up and dead time effects. The reduction of the time width of the shaped pulses is a key approach, taking into account the distortions from the ballistic deficit, non-linearity, and time instabilities. In this work, we will present the performance of cadmium–zinc–telluride (CdZnTe or CZT) pixel detectors equipped with digital shapers faster than the preamplifier peaking times (ballistic deficit pulse processing). The effects on energy resolution, throughput, energy-linearity, time stability, charge sharing, and pile-up are shown. The results highlight the absence of time instabilities …
Time-dependent current-voltage characteristics of Al/p-CdTe/Pt x-ray detectors
2012
Current-voltage (I-V) characteristics of Schottky Al/p-CdTe/Pt detectors were investigated in dark and at different temperatures. CdTe detectors with Al rectifying contacts, very appealing for high resolution x-ray and gamma ray spectroscopy, suffer from bias-induced polarization phenomena which cause current increasing with the time and severe worsening of the spectroscopic performance. In this work, we studied the time-dependence of the I-V characteristics of the detectors, both in reverse and forward bias, taking into account the polarization effects. The I-V measurements, performed at different time intervals between the application of the bias voltage and the measurement of the current…